Samsung Says It’s Shipping 28-Nm Embedded MRAM

SAN FRANCISCO — Samsung announced commercial production of its first embedded MRAM (eMRAM) product based on its 28-nm FD-SOI process. At the International Solid-State Circuits Conference earlier this year, Samsung rival Intel detailed its 22-nm embedded MRAM technology, the first embedded MRAM to utilize a FinFET process. “By integrating eMRAM with existing proven logic technologies, Samsung Foundry continues to expand its eNVM process portfolio to provide distinct competitive advantages and excellent manufacturability to meet customers and market requirements,” said Ryan Lee, vice president of foundry marketing at Samsung, in a press statement.

Source: www.eetimes.com